Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0001)

Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

An integral equation method for epitaxial step-flow growth simulations

In this paper, we describe an integral equation approach for simulating diffusion problems with moving interfaces. The solutions are represented as moving layer potentials where the unknowns are only defined on the interfaces. The resulting integro-differential equation (IDE) system is solved using spectral deferred correction (SDC) techniques developed for general differential algebraic equati...

4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (BPDs) and crystalline quality. It is found that morphological defects reduce with the decreasing ...